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| 2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features * High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2651 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 750 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current Base to emitter voltage DC current transfer raito I EBO VBE hFE Min -- -- -- -- 80 -- Typ -- -- -- -- -- -- Max 0.1 0.1 10 0.75 160 0.5 Unit A A A V -- V Test Conditions VCB = 300V, IE = 0 VCB = 300V, RBE = VEB = 5 V, IC = 0 VCE = 6V, I C = 1mA VCE = 6V, IC = 2mA I C = 30mA, IB = 3mA Collector to emitter saturation VCE(sat) voltage 2 2SD2651 Main Characteristics Maximum Collector Dissipation Curve 1.5 100A Pulse Test 60A 8 80A 50A Collector Dissipation PC (W) Collector Current IC (mA) 10 Typical Output Characteristics 1.0 6 40A 4 30A 20A IB = 10 A 0 50 100 150 Ambient Temperature Ta (sC) 0 20 40 60 80 100 Collector to emitter voltage VCE (V) 0.5 2 Typical Transfer Characteristics 100 Ta = 75 C DC Current Transfer Ratio hFE 25C -25C 100 Ta = 75C 1,000 DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) 10 25C -25C 1.0 VCE = 6 V Pulse Test 0.1 10 VCE = 6 V Pulse Test 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1.0 10 Collector Current IC (mA) 100 2SD2651 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter saturation Voltage VCE (sat) (V) 10 Gain Bandwidh Product fT (MHz) IC/IB = 10 Pulse Test 1.0 1,000 Gain Bandwidh Product vs. Collector Current VCE = 6 V Ta = 75C 25C -25C 100 0.1 10 0.01 0.1 1.0 10 100 1 0.1 Collector Current IC (mA) 1.0 10 Collector Current IC (mA) 100 Collector Output Capacitance Cob (pF) 100 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 10 1.0 0.1 0.1 1.0 10 100 Collector to Base Voltage VCB (V) 4 2SD2651 Package Dimensions As of January, 2001 Unit: mm 4.8 0.4 3.8 0.4 2.3 Max 0.55Max 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 5 2SD2651 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6 |
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